Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor

9:51 AM - 9:58 AM

[D-7-05] Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor

〇Takahiro Gotow¹, Tatsushi Suka¹, Yasuyuki Miyamoto¹ (1.Tokyo Institute of Technology)