9:58 AM - 10:05 AM

[D-7-06] SiO₂/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method

〇Keito Aoshima¹, Noriyuki Taoka¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

https://doi.org/10.7567/SSDM.2021.D-7-06