SiO<sub>2</sub>/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method

09:58 〜 10:05

[D-7-06] SiO₂/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method

〇Keito Aoshima¹、Noriyuki Taoka¹、Masahiro Horita^1,2、Jun Suda^1,2 (1.Nagoya Univ.、2.IMaSS, Nagoya Univ.)