Corner Shape Control of GaN Trench Structure Formed by Inductively Coupled Plasma Reactive Ion Etching

10:05 AM - 10:12 AM

[D-7-07] Corner Shape Control of GaN Trench Structure Formed by Inductively Coupled Plasma Reactive Ion Etching

〇Shinji Yamada¹, Takashi Ishida¹, Toshiyuki Nakamura², Ryuichiro Kamimura², Jun Suda¹, Tetsu Kachi¹ (1.Nagoya Univ., 2.ULVAC, Inc.)