10:05 〜 10:12

[D-7-07] Corner Shape Control of GaN Trench Structure Formed by Inductively Coupled Plasma Reactive Ion Etching

〇Shinji Yamada¹、Takashi Ishida¹、Toshiyuki Nakamura²、Ryuichiro Kamimura²、Jun Suda¹、Tetsu Kachi¹ (1.Nagoya Univ.、2.ULVAC, Inc.)

https://doi.org/10.7567/SSDM.2021.D-7-07