High-breakdown-voltage Al<sub>0.36</sub>Ga<sub>0.64</sub>N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts

10:12 AM - 10:19 AM

[D-7-08] High-breakdown-voltage Al_0.36Ga_0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts

〇Akiyoshi Inoue¹, Sakura Tanaka¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech. )