High-breakdown-voltage Al<sub>0.36</sub>Ga<sub>0.64</sub>N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts

10:12 〜 10:19

[D-7-08] High-breakdown-voltage Al_0.36Ga_0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts

〇Akiyoshi Inoue¹、Sakura Tanaka¹、Takashi Egawa¹、Makoto Miyoshi¹ (1.Nagoya Inst. Tech. )