Fabrication and characterization of AlGaN <em>p</em>-<em>n</em> diode with ZnO as a tunnel junction layer

14:58 〜 15:05

[E-5-06] Fabrication and characterization of AlGaN p-n diode with ZnO as a tunnel junction layer

〇Shun Ukita¹、Jun Morimoto¹、Masaya Daikoku¹、Sun Zheng¹、Takeyoshi Tajiri¹、Kazuo Uchida¹ (1.University of Electro-Communications)