The Japan Society of Applied Physics

4:15 PM - 4:22 PM

[H-2-02] Formation of monolayer MoS2 p–n junctions by spatially selective Nb doping during chemical vapor deposition

〇Mitsuhiro Okada1, Toshifumi Irisawa1, Naoka Nagamura2,3, Naoya Okada1, Wen Hsin Chang1, Toshitaka Kubo1, Tetsuo Shimizu1, Masatou Ishihara1 (1.Nat. Inst. of Adv. Indus. Sci. and Tech. (AIST), 2.Nat. Inst. for Mater. Sci. , 3.Japan Sci. and Tech. Agency)

https://doi.org/10.7567/SSDM.2021.H-2-02