Formation of monolayer MoS<sub>2</sub> <em>p–n</em> junctions by spatially selective Nb doping during chemical vapor deposition

Mitsuhiro Okada

doi:https://doi.org/10.7567/SSDM.2021.H-2-02

16:15 〜 16:22

[H-2-02] Formation of monolayer MoS₂ p–n junctions by spatially selective Nb doping during chemical vapor deposition

〇Mitsuhiro Okada¹、Toshifumi Irisawa¹、Naoka Nagamura^2,3、Naoya Okada¹、Wen Hsin Chang¹、Toshitaka Kubo¹、Tetsuo Shimizu¹、Masatou Ishihara¹ (1.Nat. Inst. of Adv. Indus. Sci. and Tech. (AIST)、2.Nat. Inst. for Mater. Sci. 、3.Japan Sci. and Tech. Agency)

https://doi.org/10.7567/SSDM.2021.H-2-02

2021 International Conference on Solid State Devices and Materials

[H-2-02] Formation of monolayer MoS2 p–n junctions by spatially selective Nb doping during chemical vapor deposition

[H-2-02] Formation of monolayer MoS₂ p–n junctions by spatially selective Nb doping during chemical vapor deposition