Formation of monolayer MoS<sub>2</sub> <em>p–n</em> junctions by spatially selective Nb doping during chemical vapor deposition

Mitsuhiro Okada, Toshifumi Irisawa, Naoka Nagamura, Naoya Okada, Wen Hsin Chang, Toshitaka Kubo, Tetsuo Shimizu, Masatou Ishihara

doi:https://doi.org/10.7567/SSDM.2021.H-2-02

4:15 PM - 4:22 PM

[H-2-02] Formation of monolayer MoS₂ p–n junctions by spatially selective Nb doping during chemical vapor deposition

〇Mitsuhiro Okada¹, Toshifumi Irisawa¹, Naoka Nagamura^2,3, Naoya Okada¹, Wen Hsin Chang¹, Toshitaka Kubo¹, Tetsuo Shimizu¹, Masatou Ishihara¹ (1.Nat. Inst. of Adv. Indus. Sci. and Tech. (AIST), 2.Nat. Inst. for Mater. Sci. , 3.Japan Sci. and Tech. Agency)

https://doi.org/10.7567/SSDM.2021.H-2-02

2021 International Conference on Solid State Devices and Materials

[H-2-02] Formation of monolayer MoS2 p–n junctions by spatially selective Nb doping during chemical vapor deposition

[H-2-02] Formation of monolayer MoS₂ p–n junctions by spatially selective Nb doping during chemical vapor deposition