Non-Uniform Gate-Capacitance Distribution in Fe Nanodot Array Based Double-Gate Single-Electron Devices Due to Geometrical Structure of the Dots

Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi

doi:https://doi.org/10.7567/SSDM.2021.H-5-02

2:30 PM - 2:37 PM

[H-5-02] Non-Uniform Gate-Capacitance Distribution in Fe Nanodot Array Based Double-Gate Single-Electron Devices Due to Geometrical Structure of the Dots

〇Takayuki Gyakushi¹, Yuki Asai¹, Beommo Byun¹, Ikuma Amano¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Graduate School of Info. Sci. and Tech., Hokkaido Univ.)

https://doi.org/10.7567/SSDM.2021.H-5-02

2021 International Conference on Solid State Devices and Materials

[H-5-02] Non-Uniform Gate-Capacitance Distribution in Fe Nanodot Array Based Double-Gate Single-Electron Devices Due to Geometrical Structure of the Dots