Non-Uniform Gate-Capacitance Distribution in Fe Nanodot Array Based Double-Gate Single-Electron Devices Due to Geometrical Structure of the Dots

Takayuki Gyakushi

doi:https://doi.org/10.7567/SSDM.2021.H-5-02

14:30 〜 14:37

[H-5-02] Non-Uniform Gate-Capacitance Distribution in Fe Nanodot Array Based Double-Gate Single-Electron Devices Due to Geometrical Structure of the Dots

〇Takayuki Gyakushi¹、Yuki Asai¹、Beommo Byun¹、Ikuma Amano¹、Atsushi Tsurumaki-Fukuchi¹、Masashi Arita¹、Yasuo Takahashi¹ (1.Graduate School of Info. Sci. and Tech., Hokkaido Univ.)

https://doi.org/10.7567/SSDM.2021.H-5-02

2021 International Conference on Solid State Devices and Materials

[H-5-02] Non-Uniform Gate-Capacitance Distribution in Fe Nanodot Array Based Double-Gate Single-Electron Devices Due to Geometrical Structure of the Dots