16:50 〜 16:57

[H-6-07] High performance SnS/h-BN heterostructure p-FET via Ti contact reaction

〇Yih-Ren Chang¹、Takashi Taniguchi²、Kenji Watanabe²、Tomonori Nishimura¹、Kosuke Nagashio¹ (1.Univ. of Tokyo、2.NIMS)

https://doi.org/10.7567/SSDM.2021.H-6-07