17:04 〜 17:11

[H-6-09] Polarity transition from n-type to p-type WS₂ FET by controlling Schottky barrier

〇Ryoichi Kato¹、Keiji Ueno²、Takashi Taniguchi³、Kenji Watanabe³、Tomonori Nishimura¹、Kosuke Nagashio¹ (1.Univ. of Tokyo、2.Saitama Univ.、3.NIMS)

https://doi.org/10.7567/SSDM.2021.H-6-09