5:04 PM - 5:11 PM

[H-6-09] Polarity transition from n-type to p-type WS₂ FET by controlling Schottky barrier

〇Ryoichi Kato¹, Keiji Ueno², Takashi Taniguchi³, Kenji Watanabe³, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.Univ. of Tokyo, 2.Saitama Univ., 3.NIMS)

https://doi.org/10.7567/SSDM.2021.H-6-09