High mobility hydrogenated indium oxide thin-film transistors (InO<sub>x</sub>:H TFTs) formed by low-temperature solid phase crystallization

Taiki Kataoka

doi:https://doi.org/10.7567/SSDM.2021.J-2-03

16:22 〜 16:29

[J-2-03] High mobility hydrogenated indium oxide thin-film transistors (InO_x:H TFTs) formed by low-temperature solid phase crystallization

〇Taiki Kataoka¹、Mamoru Furuta^1,2 (1.Materials and Science and Engineering Course, Kochi Univ. of Tech.、2.Center for Nanotechnology, Research Institute, Kochi Univ. of Tech.)

https://doi.org/10.7567/SSDM.2021.J-2-03

2021 International Conference on Solid State Devices and Materials

[J-2-03] High mobility hydrogenated indium oxide thin-film transistors (InOx:H TFTs) formed by low-temperature solid phase crystallization

[J-2-03] High mobility hydrogenated indium oxide thin-film transistors (InO_x:H TFTs) formed by low-temperature solid phase crystallization