Isotropic TFT Mobility in the (100)-Oriented Grain-Boundary-Free Huge Si Thin Film Grown by the Continuous-Wave-Laser Lateral Crystallization

Nobuo Sasaki

doi:https://doi.org/10.7567/SSDM.2021.J-4-04

11:29 〜 11:36

[J-4-04] Isotropic TFT Mobility in the (100)-Oriented Grain-Boundary-Free Huge Si Thin Film Grown by the Continuous-Wave-Laser Lateral Crystallization

〇Nobuo Sasaki^1,2,3、Muhammad Arif²、Satoshi Takayama²、Jun Gotoh³、Shigeto Sugimoto³、Yukiharu Uraoka² (1.Sasaki Consulting、2.Nara. Inst. of Sci. and Tech.、3.V-Tech.)

https://doi.org/10.7567/SSDM.2021.J-4-04

2021 International Conference on Solid State Devices and Materials

[J-4-04] Isotropic TFT Mobility in the (100)-Oriented Grain-Boundary-Free Huge Si Thin Film Grown by the Continuous-Wave-Laser Lateral Crystallization