Study on Negative-Bias Photodegradation Mechanism in IGZO FET with First  -Principles Calculation

Tomonori Nakayama

doi:https://doi.org/10.7567/SSDM.2021.J-5-04

14:44 〜 14:51

[J-5-04] Study on Negative-Bias Photodegradation Mechanism in IGZO FET with First -Principles Calculation

〇Tomonori Nakayama¹、Masahiro Takahashi¹、Hitoshi Kunitake¹、Kuo-Chang Huang²、Hiroshi Yoshida²、Miller Liao³、Shou-Zen Chang²、Shunpei Yamazaki¹ (1.Semiconductor Energy Laboratory Corp., Ltd、2.Powerchip Semiconductor Manufacturing Corp.、3.National Taiwan Univ.)

https://doi.org/10.7567/SSDM.2021.J-5-04

2021 International Conference on Solid State Devices and Materials

[J-5-04] Study on Negative-Bias Photodegradation Mechanism in IGZO FET with First -Principles Calculation