Room-temperature fabrication of ionic liquid gated Zn<sub>3</sub>N<sub>2</sub> electric double layer transistors with non-degenerate channel electron density

Kaiwen Li

doi:https://doi.org/10.7567/SSDM.2021.J-5-07

15:05 〜 15:12

[J-5-07] Room-temperature fabrication of ionic liquid gated Zn₃N₂ electric double layer transistors with non-degenerate channel electron density

〇Kaiwen Li^1,2、Kota Hanzawa¹、Keisuke Ide¹、Kosuke Matsuzaki¹、Takayoshi Katase¹、Hidenori Hiramatsu¹、Hideo Hosono¹、Qun Zhang²、Toshio Kamiya¹ (1.Tokyo Inst. of Tech.、2.Fudan Univ.)

https://doi.org/10.7567/SSDM.2021.J-5-07

2021 International Conference on Solid State Devices and Materials

[J-5-07] Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density

[J-5-07] Room-temperature fabrication of ionic liquid gated Zn₃N₂ electric double layer transistors with non-degenerate channel electron density