Theoretical Study of H Adsorption on Stepped SiC Surface during CVD Growth

14:00 〜 14:07

[K-5-01] Theoretical Study of H Adsorption on Stepped SiC Surface during CVD Growth

〇Tomoya Kimura¹、Kenta Chokawa²、Atsushi Oshiyama²、Kenji Shiraishi^2,1 (1.Graduate School of Eng., Nagoya Univ.、2.IMaSS, Nagoya Univ.)