The Japan Society of Applied Physics

2:07 PM - 2:14 PM

[K-5-02] Control limits of low doping concentration for n-type 4H-SiC epitaxial films grown at different C/Si ratios

〇Yoshiaki Daigo1, Toru Watanabe1, Akio Ishiguro1, Shigeaki Ishii1, Yoshikazu Moriyama1, Ichiro Mizushima1 (1.NuFlare Technology, Inc.)

https://doi.org/10.7567/SSDM.2021.K-5-02