Control limits of low doping concentration for n-type 4H-SiC epitaxial films grown at different C/Si ratios

14:07 〜 14:14

[K-5-02] Control limits of low doping concentration for n-type 4H-SiC epitaxial films grown at different C/Si ratios

〇Yoshiaki Daigo¹、Toru Watanabe¹、Akio Ishiguro¹、Shigeaki Ishii¹、Yoshikazu Moriyama¹、Ichiro Mizushima¹ (1.NuFlare Technology, Inc.)