Si and SiGe Epitaxial Growth in view of Nanosheet CMOS Devices and 3D Sequential Integration

Roger Loo

doi:https://doi.org/10.7567/SSDM.2021.K-6-01

3:45 PM - 4:15 PM

[K-6-01 (Invited)] Si and SiGe Epitaxial Growth in view of Nanosheet CMOS Devices and 3D Sequential Integration

〇Roger Loo¹, Andriy Hikavyy¹, Clement Porret¹, Erik Rosseel¹, Gianluca Rengo^1,2,3, Rami Khazaka⁴, Qi Xie⁴, André Vantomme², Robert Langer¹ (1.imec, 2.Quantum Solid State Physics, KU Leuven, 3.Fonds Wetenschappelijk Onderzoek (FWO) - Vlaanderen, 4.ASM Belgium NV)

https://doi.org/10.7567/SSDM.2021.K-6-01

2021 International Conference on Solid State Devices and Materials

[K-6-01 (Invited)] Si and SiGe Epitaxial Growth in view of Nanosheet CMOS Devices and 3D Sequential Integration