16:50 〜 16:57

[K-6-07] SiSn Mediated Formation of Polycrystalline SiGeSn

〇Yosuke Shimura^1,2、Masaki Okado¹、Hirokazu Tatsuoka¹ (1.Shizuoka Univ.、2.Research Inst. of Electronics)

https://doi.org/10.7567/SSDM.2021.K-6-07