High Ge-Content SiGe Films Epitaxially Grown by Annealing Al-Ge Alloyed Pastes on Si Substrate

Keisuke Fukuda, Satoru  Miyamoto, Masahiro Nakahara , Shota Suzuki, Marwan Dhamrin, Kensaku Maeda, Kozo Fujiwara, Noritaka Usami

doi:https://doi.org/10.7567/SSDM.2021.K-6-08

4:57 PM - 5:04 PM

[K-6-08] High Ge-Content SiGe Films Epitaxially Grown by Annealing Al-Ge Alloyed Pastes on Si Substrate

〇Keisuke Fukuda¹, Satoru Miyamoto¹, Masahiro Nakahara ², Shota Suzuki², Marwan Dhamrin^2,4, Kensaku Maeda³, Kozo Fujiwara³, Noritaka Usami¹ (1.Nagoya Univ., 2.Toyo Alminium Corp., 3.Tohoku Univ., 4.Osaka Univ.)

https://doi.org/10.7567/SSDM.2021.K-6-08

2021 International Conference on Solid State Devices and Materials

[K-6-08] High Ge-Content SiGe Films Epitaxially Grown by Annealing Al-Ge Alloyed Pastes on Si Substrate