A 17MHz Wide-band Isolated Current Sensor for D-mode GaN Half-bridge

Hideaki Majima, Hiroaki Ishihara, Katsuyuki Ikeuchi, Toshiyuki Ogawa, Yuichi Sawahara, Tatsuhiro Ogawa, Satoshi Takaya, Kohei Onizuka , Osamu Watanabe

doi:https://doi.org/10.7567/SSDM.2021.L-5-03

2:37 PM - 2:44 PM

[L-5-03] A 17MHz Wide-band Isolated Current Sensor for D-mode GaN Half-bridge

〇Hideaki Majima¹, Hiroaki Ishihara², Katsuyuki Ikeuchi¹, Toshiyuki Ogawa¹, Yuichi Sawahara¹, Tatsuhiro Ogawa¹, Satoshi Takaya², Kohei Onizuka ², Osamu Watanabe¹ (1.Toshiba Electronic Devices and Storage Corp., 2.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2021.L-5-03

2021 International Conference on Solid State Devices and Materials

[L-5-03] A 17MHz Wide-band Isolated Current Sensor for D-mode GaN Half-bridge