We characterized current injection and electroluminescence (EL) properties of wurtzite (WZ) InP nanowire (NW) light-emitting diodes (LEDs) with axial junction. The EL spectra showed two peaks originated from zinc-blende (ZB) and WZ phase. Also, the EL spectra exhibited two different behaviors although the LED junction structure was same. One showed single EL peak, originated from only bandgap of ZB InP. The another showed two EL peaks that originated from ZB and WZ phase. The difference of the EL behavior was resulted from the difference in contact position and depletion layer spreading.