Observation of Reversible Refractive Index Change of  CMOS-Compatible Silicon Nitride Film

Yuriko Maegami

doi:https://doi.org/10.7567/SSDM.2022.A-9-05

2:30 PM - 2:45 PM

[A-9-05] Observation of Reversible Refractive Index Change of CMOS-Compatible Silicon Nitride Film

〇Yuriko Maegami¹, Gangwei Cong¹, Morifumi Ohno¹, Toshihiro Narushima¹, Noritsugu Yamamoto¹, Hitoshi Kawashima¹, Koji Yamada¹ (1. AIST (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.A-9-05

We report a reversible refractive index change of a silicon nitride film deposited by plasma-enhanced chemical vapor deposition. The reversible change was observed in alternately processing of annealing and ultraviolet irradiation. The reversible index change has a potential to be applicable to non-volatile photon-ic interference circuits.

2022 International Conference on Solid State Devices and Materials

[A-9-05] Observation of Reversible Refractive Index Change of CMOS-Compatible Silicon Nitride Film