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[B-3-03] Impact of N-type Impurities on Solid-phase Crystallization of Amorphous Ge
Presentation style: Online
Among n-type impurities, P doping in amorphous Ge significantly promoted the lateral growth during solid-phase crystallization, resulting in large grains. The electron mobility was the highest among n-type polycrystalline Ge directly grown on insulators at low temperatures.
