The diode effect in superconductors, called the superconducting diode effect (SDE), implies a superconducting state in one direction and a normal-conducting state in the other direction. Recently, the SDE has been discovered in the Nb/V/Ta superlattice with a polar structure. However, the SDE requires an external magnetic field, which limits its practical application. We present an SDE in a zero-field using noncentrosymmetric [Nb/V/Co/V/Ta]20 multilayers. The polarity of the SDE is controlled by the magnetization direction of the ferromagnetic layer. These findings enable the development of novel non-volatile memories and logic circuits with ultralow power consumption using such SDEs.