Impact of Grain Boundaries in MgO Layer on Data Retention Performance of STT-MRAM

Keisuke Morishita

doi:https://doi.org/10.7567/SSDM.2022.C-10-05

5:00 PM - 5:15 PM

[C-10-05] Impact of Grain Boundaries in MgO Layer on Data Retention Performance of STT-MRAM

〇Keisuke Morishita¹, Yosuke Harashima², Masaaki Araidai^1,3, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,3,4 (1. Univ. of Nagoya (Japan), 2. NAIST (Japan), 3. Inst. of Materials and Systems for Sustainablity (Japan), 4. Center for Innovative Intergrated Electronic Systems (Japan), 5. Univ. of Tohoku (Japan), 6. Research Inst. Electrical Communiaction (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.C-10-05

We have theoretically investigated the influence of grain boundary in MgO layer for data retention in STT-MRAM. We have found that grain boundary decreases interfacial perpendicular magnetic anisotropy based on the first principles calculations.
This is because the peak of minority spin d_xz/d_yz DOS decreased near fermi energy by the existence of grain boundary.

2022 International Conference on Solid State Devices and Materials

[C-10-05] Impact of Grain Boundaries in MgO Layer on Data Retention Performance of STT-MRAM