17:15 〜 17:30

[C-10-06 (Late News)] Highly Efficient Spin Current Source Using BiSb Topological Insulator / NiO Bilayers

〇Julian Sasaki¹, Shigeki Takahashi², Yoshiyuki Hirayama², Pham Nam Hai¹ (1. Tokyo Institute of Technology (Japan), 2. Samsung R&D Institute Japan (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.C-10-06