In this study, we propose an extended gate field-effect transistor (EGFET) based high-sensitivity dopamine (DA) sensor using resistive coupling effect to effectively amplify electrical signals. The constructed dopamine sensor has a structure in which an individual transducer unit and a sensing unit are electrically connected. The SnO2 sensing membrane of EG had a low dopamine sensitivity of 10.14 mV/log [DA], but the resistance coupling effect greatly amplified the sensitivity of dopamine up to 8.67 times and 87.95 mV/log [DA]. In addition, it was con-firmed that the resistance-binding effect can linearly amplify dopamine sensitivity. Therefore, the proposed EGFET-based sensor is expected to be an effective method for fast and accurate detection of dopamine by utilizing the resistive coupling effect.