12:15 PM - 12:30 PM

[E-1-04 (Late News)] HfO₂-based ferroelectric-gated variable-area capacitors

〇Takaaki Miyasako¹, Shingo Yoneda¹, Tadasu Hosokura¹, Masahiko Kimura¹, Eisuke Tokumitsu² (1. Murata Manufacturing Co., Ltd. (Japan), 2. Japan Advanced Institute of Science and Technology (JAIST) (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.E-1-04