We report a novel approach for fabricating T-gate polysilicon thin film transistors (T-gate TFTs) with lightly doped drain (LDD) structures using a single process step of S/D implantation. The fabrication is thus greatly simplified as compared to conventional LDD formation scheme. Moreover, the T-gate device exhibits not only suppressed off-state leakage but also much higher current drive than that of conventional poly-Si TFT without LDD.