Through bandgap engineering, a dual-stacked IGZO channel layer device (IGZO with higher Zinc con-tent/IGZO) was fabricated. The more Zn content in IGZO, the larger the energy band gap, which can be used as a buried channel design. Buried channel designs can be used for lower subthreshold swing and higher mobility. In addition, using the characteristics of Zn in-terstitial and Zn vacancy hole traps of the more Zn con-tents IGZO channel layer can cause the threshold voltage shift. Therefore, this device structure can be effectively used for optoelectronic memory storage during the oper-ation of dual-gate IGZO TFTs.