Nanoscale Trench-Gate Self-Aligned C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor using Cap Layer

MASAHIRO WAKUDA

doi:https://doi.org/10.7567/SSDM.2022.E-4-04

10:15 AM - 10:30 AM

[E-4-04] Nanoscale Trench-Gate Self-Aligned C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor using Cap Layer

〇MASAHIRO WAKUDA¹, Motomu Kurata¹, Satoru Saito¹, Shunichi Ito¹, Ryo Arasawa¹, Shinya Sasagawa¹, Kentaro Sugaya¹, Yoshikazu Hiura¹, Hidekazu Miyairi¹, Yuji Egi¹, Ryota Hodo¹, Hitoshi Kunitake¹, Shunpei Yamazaki¹ (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.E-4-04

Highly accurate nanoscale fabrication technology is required to enable nanoscale field-effect transistors (FETs) using crystalline oxide semiconductors to have good switching characteristics. As a structure satisfying the requirements, a trench-gate self-aligned FET using c-axis aligned crystalline indium-gallium-zinc oxide (IGZO) is provided with a film (cap layer) that protects a top and side surfaces of an S/D electrode and a side sur-face of an IGZO layer under the S/D electrode.

2022 International Conference on Solid State Devices and Materials

[E-4-04] Nanoscale Trench-Gate Self-Aligned C-Axis Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor using Cap Layer