2:30 PM - 2:45 PM
[E-6-04] A Novel Poly-Si/IGZO Thin-Film Transistor Process Platform for Sensor Applications
Presentation style: Online
We presented a novel three-mask scheme for fabricating a sensing cell consisting of a top-gated poly-Si thin-film transistor (TFT) and a bottom-gated IGZO TFT. The hybrid TFT sensing cell exhibits sharp transition with a high current ratio (≈ 1×10^5) between two switching levels.
