The Japan Society of Applied Physics

2022 International Conference on Solid State Devices and Materials

2022 International Conference on Solid State Devices and Materials

Sep 26, 2022 - Dec 23, 2022
Makuhari Messe

12:15 PM - 12:30 PM

[F-1-04] Demonstration of Ultra-thin Sub-10 nm Indium Oxide (In2O3) Field-Effect-Transistors (FETs) by Sputtering Deposition with Annealing-Free Toward BEOL Memory Applications

Zhao-Feng LOU1, Chun-Yu Liao1, Kuo-Yu Hsiang1,2, Chen-Ying Lin1, Jia-Yang Lee1, Pin-Huan Chen3, Wei-Chang Ray1, Zhi-Xian Li1, Han-Chen Tseng1, Fu-Sheng Chang1, Chun-Chieh Wang1, Jeng-Han Tsai3, Ming-Han Liao4, 〇Min-Hung Lee1 (1. Inst. and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal Univ. (Taiwan), 2. Department of Electronics Engineering, National Yang Ming Chiao Tung Univ. (Taiwan), 3. Department of Electrical Engineering, National Taiwan Normal Univ. (Taiwan), 4. Department of Mechanical Engineering, National Taiwan Univ. (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-1-04

Sub-10 nm In2O3 Field-Effect-Transistors (FETs) by sputtering deposition with annealing-free is demonstrated for high on/off ratio 106 and low operation voltage 4V. The ultra-thin 4 nm and 10 nm of In2O3 are validated by HR-TEM and EDS, as well as the mobility extracted as 1 cm2/V.s and 4 cm2/V.s, respectively. The FeMFET of the proposed In2O3 FET with ferroelectric HfZrO2 capacitor shows hysteretic Threshold voltage shift for memory capability and is feasible for back end of line (BEOL) application.