The Japan Society of Applied Physics

2022 International Conference on Solid State Devices and Materials

2022 International Conference on Solid State Devices and Materials

2022年9月26日 〜 2022年12月23日
幕張メッセ

17:00 〜 17:15

[F-10-04] Demonstration of Single-gate MoS2 Tunnel FET with Natural In-plane Heterojunction

〇Tomohiro Fukui1, Tomonori Nishimura1, Takashi Taniguchi2, Kenji Watanabe2, Kosuke Nagashio1 (1. Univ. of Tokyo (Japan), 2. Inst. for Materials Science (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-10-04

In this work, Nb-doped p+-MoS2 Tunnel FET was fabricated and demonstrated by single gate operation. It was clarified that type-III band alignment was formed at natural in-plane heterojunction. Furthermore, the additional test device revealed the two kinds current paths in the natural in-plane heterojunction device.