The Japan Society of Applied Physics

2022 International Conference on Solid State Devices and Materials

2022 International Conference on Solid State Devices and Materials

Sep 26, 2022 - Dec 23, 2022
Makuhari Messe

3:15 PM - 3:30 PM

[F-2-06] Breaking the Thermal Stability Limit of Phase-Change Materials for Embedded Memory thanks to Innovative N-doped GeSe1-xTex Alloys

〇Martina Tomelleri1,2, Anthony Albanese1, Chiara Sabbione1, Niccolo Castellani1, Christophe Licitra1, Valentina M. Giordano 3, Daniel Benoit2, Francoise Hippert4, Pierre Noe1 (1. Inst. CEA-LETI, F-38000, Grenoble (France), 2. Indus. STMicroelectronics, F-38926 Crolles (France), 3. ILM, UMR 5306 Univ. Lyon 1-CNRS, F-69622 Villeurbanne Cedex (France), 4. Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, F-38000 Grenoble (France))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.F-2-06

Recently, we revealed the unprecedented high thermal stability offered by the novel chalcogenide phase-change GeSe1-xTex alloys. The latter is of paramount interest for non-volatile PCM memory requiring high-temperature data retention. Herein, we investigate for the first time the effect of N incorporation in Ge-Se-Te thin films. We show that the thermal and programming performances in device can be potentially boosted thanks to the addition of ∼10 at.% of nitrogen, making N-doped GeSe1-xTex an extremely promising material for embedded PCM memories.