Nanosecond Laser Annealing Based Wake-up of Ferroelectric HfZrO<sub>2</sub> Capacitors for BEOL Compatible and High Throughput FeRAM

Jia-Yang - Lee

doi:https://doi.org/10.7567/SSDM.2022.F-3-05

5:30 PM - 5:45 PM

[F-3-05] Nanosecond Laser Annealing Based Wake-up of Ferroelectric HfZrO₂ Capacitors for BEOL Compatible and High Throughput FeRAM

〇Jia-Yang - Lee^1,2, Kuo-Yu Hsiang^1,3, Chun-Yu Liao¹, Zhao-Feng Lou¹, Chen-Ying Lin¹, Song-Lin Tang¹, Fu-Sheng Chang¹, Zhi-Xian Li¹, Wei-Chang Ray¹, Han-Chen Tseng¹, Chun-Chieh Wang¹, Ming-Han Liao⁴, Chee-Wee Liu², Min-Hung Lee¹ (1. Inst. and Undergraduate Program of Electro-Optical Eng. , National Taiwan Normal Univ. (Taiwan), 2. Graduate School of Advance Tech. , National Taiwan Univ. (Taiwan), 3. Inst. of Electronics, National Yang Ming Chiao Tung Univ. (Taiwan), 4. Department of mechanical engineering, National Taiwan Univ. (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.F-3-05

Novel wake-up procedure is proposed by nanosecond laser annealing (NLA), and the outstanding delta 2Pr and low temperature process (lower than 400oC for underneath layer) are demonstrated. The general wake-up by E-field cycling makes mass production difficult due to individual device step by step. The proposed method is feasible for BEOL compatible and high throughput FeRAM.

2022 International Conference on Solid State Devices and Materials

[F-3-05] Nanosecond Laser Annealing Based Wake-up of Ferroelectric HfZrO2 Capacitors for BEOL Compatible and High Throughput FeRAM

[F-3-05] Nanosecond Laser Annealing Based Wake-up of Ferroelectric HfZrO₂ Capacitors for BEOL Compatible and High Throughput FeRAM