A high endurance atomic storage random access memory (AS-RAM) is proposed. The simple device structure provides potential advantage of scaling down and reaching larger cell density than DRAM devices at lower cost. The device configuration supports the random access feature and have low read and write latency due to the large read current and short programming pulse width down to 10ns. High program/erase endurance of more than 10^10 times is achieved. The AS-RAM is a promising candidate for DRAM-like memory.