We show how rotational Moire interfaces for electri-cal contacts between metals and monolayer MoS2 can be used to explain the metal dependence of physisorptive sites with weaker Fermi level pinning. This creates the smallest n-type Schottky barrier heights, giving the lowest contact resistances for physisorptive sites of In and noble metal Ag, as seen experimentally, but previously unexplained. They arise from a combination of low metal work function and physisorptive bonding at these sites.