Silicon carbide (4H-SiC) has been considered as one of the future candidates for power electronics components, ena-bling smaller size, faster switching speed, higher reliability, and higher efficiency than silicon-based MOSFETs. To date, however, the thermal performance of Si-Ge-C-based power MOSFETs is unclear. This work explains the thermal prop-erties of Si1-xGexC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a novel low leakage, high thermal conductivity and high power 4H-GeC MOSFET device.