[No Show] Drain Current Variability Assessment in 2-levels Stacked Nanowire Gate All Around Field Effect Transistors

Donghyun Kim

3:15 PM - 3:30 PM

[G-2-05] [No Show] Drain Current Variability Assessment in 2-levels Stacked Nanowire Gate All Around Field Effect Transistors

〇Donghyun Kim^1,2, Sylvain Barraud³, Jae Woo Lee², Gerard Ghibaudo¹, Christoforos Theodorou¹ (1. Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, Grenoble INP, CNRS, IMEP-LAHC (France), 2. Electronics and info. engineering, Korea Univ. (Korea), 3. Univ. Grenoble Alpes, CEA, LETI (France))

Presentation style:

2022 International Conference on Solid State Devices and Materials

[G-2-05] [No Show] Drain Current Variability Assessment in 2-levels Stacked Nanowire Gate All Around Field Effect Transistors