Partial dislocation combinations near the substrate/epilayer interface and the epilayer surface of 4H-SiC are analyzed for bar-shaped single Shockley-type stacking faults (1SSFs). Although the partial dislocations are found to have a zigzag structure similar to that found in triangular 1SSF, the combination is thought to be different. The features of the original basal plane dislocation are speculated on.