14:45 〜 15:00
[J-6-06] 4H-SiC surface nitridation kinetic model in high temperature N2 (+O2) annealing focusing on the effects of annealing temperature and O2 partial pressure
Presentation style: On-site (in-person)
An SiC surface nitridation kinetic model was build up
considering the reaction rates of N-incorporation (Nr) and N-removal (k). According to our model, the saturated surface N density (AN) is determined by the ratio Nr/k. Based on this model, the effects of the annealing temperature (T) and O2 partial pressure on the saturated AN for 4H-SiC(0001) were investigated for high-T N2 annealing systematically. Experimentally, the saturated AN was observed to increase with T but decrease with the O2 partial pressure, which is understandable by considering our model.
considering the reaction rates of N-incorporation (Nr) and N-removal (k). According to our model, the saturated surface N density (AN) is determined by the ratio Nr/k. Based on this model, the effects of the annealing temperature (T) and O2 partial pressure on the saturated AN for 4H-SiC(0001) were investigated for high-T N2 annealing systematically. Experimentally, the saturated AN was observed to increase with T but decrease with the O2 partial pressure, which is understandable by considering our model.