15:30 〜 15:45

[J-6-09 (Late News)] Theoretical Study of the Influence of GaO_x Layer on the SiO₂/GaN Interface

〇Shuto Hattori¹, Atsushi Oshiyama², Seiichi Miyazaki¹, Heiji Watanabe³, Katsunori Ueno⁴, Ryo Tanaka⁴, Tsurugi Kondo⁴, Shinya Takashima⁴, Masaharu Edo⁴, Kenji Shiraishi^2,1 (1. Graduate School of Eng., Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan), 3. Graduate School of Eng., Osaka Univ. (Japan), 4. Fuji Electric Co., Ltd. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-6-09